Toshiba Semiconductor and Storage TPH1R104PB,L1XHQ

Enrgtech Part No: ET19870709
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Manufacturer Part No:
TPH1R104PB,L1XHQ
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Manufacturer: Toshiba Semiconductor and Storage

TPH1R104PB-L1XHQ Toshiba Semiconductor and Storage TPH1R104PB,L1XHQ

Product Information

FET Feature:

HTSUS:

8541.21.0095

Vgs(th) (Max) @ Id:

3V @ 500µA

Operating Temperature:

175°C

Package / Case:

8-PowerVDFN

Rds On (Max) @ Id, Vgs:

1.14mOhm @ 60A, 10V

title:

TPH1R104PB,L1XHQ

edacadModel:

TPH1R104PB,L1XHQ Models

FET Type:

N-Channel

Drive Voltage (Max Rds On, Min Rds On):

6V, 10V

edacadModelUrl:

/en/models/12155001

Drain to Source Voltage (Vdss):

40 V

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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPH1R104PB,L1XHQ. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 3v @ 500µa. The product has 175°c operating temperature range. Moreover, the product comes in 8-powervdfn. It has a maximum Rds On and voltage of 1.14mohm @ 60a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 960mw (ta), 132w (tc). It has a long 52 weeks standard lead time. The product's input capacitance at maximum includes 4560 pf @ 10 v. The product is available in surface mount configuration. The product u-mosix-h, is a highly preferred choice for users. The maximum gate charge and given voltages include 55 nc @ 10 v. 8-sop advance (5x5) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 120a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tph1r104, a base product number of the product. The product is designated with the ear99 code number.

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