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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK160F10N1,LXGQ. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has 175°c operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 2.4mohm @ 80a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 3 (168 hours). The product carries maximum power dissipation 375w (tc). The product's input capacitance at maximum includes 8510 pf @ 10 v. The product is available in surface mount configuration. The product u-mosviii-h, is a highly preferred choice for users. The maximum gate charge and given voltages include 121 nc @ 10 v. to-220sm(w) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 160a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk160f10, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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