Toshiba Semiconductor and Storage TJ20S04M3L,LXHQ

Enrgtech Part No: ET19870699
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Manufacturer Part No:
TJ20S04M3L,LXHQ
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Manufacturer: Toshiba Semiconductor and Storage

TJ20S04M3L-LXHQ Toshiba Semiconductor and Storage TJ20S04M3L,LXHQ

Product Information

FET Feature:

HTSUS:

8541.29.0095

Vgs(th) (Max) @ Id:

3V @ 1mA

Operating Temperature:

175°C

Package / Case:

TO-252-3, DPAK (2 Leads + Tab), SC-63

Rds On (Max) @ Id, Vgs:

22.2mOhm @ 10A, 10V

title:

TJ20S04M3L,LXHQ

edacadModel:

TJ20S04M3L,LXHQ Models

FET Type:

P-Channel

Drive Voltage (Max Rds On, Min Rds On):

6V, 10V

edacadModelUrl:

/en/models/12154991

Drain to Source Voltage (Vdss):

40 V

Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TJ20S04M3L,LXHQ. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3v @ 1ma. The product has 175°c operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 22.2mohm @ 10a, 10v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. The product has a 40 v drain to source voltage. The maximum Vgs rate is +10v, -20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 41w (tc). It has a long 32 weeks standard lead time. The product's input capacitance at maximum includes 1850 pf @ 10 v. The product is available in surface mount configuration. The product u-mosvi, is a highly preferred choice for users. The maximum gate charge and given voltages include 37 nc @ 10 v. dpak+ is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 20a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tj20s04, a base product number of the product. The product is designated with the ear99 code number.

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