Microsemi Corporation APT20M18B2VRG

APT20M18B2VRG Microsemi Corporation
Microsemi Corporation

Product Information

Rds On (Max) @ Id, Vgs:
18mOhm @ 50A, 10V
Detailed Description:
N-Channel 200V 100A (Tc) Through Hole T-MAX™ [B2]
Input Capacitance (Ciss) (Max) @ Vds:
9880pF @ 25V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4V @ 2.5mA
Series:
POWER MOS V®
Gate Charge (Qg) (Max) @ Vgs:
330nC @ 10V
Supplier Device Package:
T-MAX™ [B2]
Packaging:
Tube
FET Type:
N-Channel
Package / Case:
TO-247-3 Variant
Drain to Source Voltage (Vdss):
200V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT20M18B2VRG. It has a maximum Rds On and voltage of 18mohm @ 50a, 10v. It features n-channel 200v 100a (tc) through hole t-max™ [b2]. The product's input capacitance at maximum includes 9880pf @ 25v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 4v @ 2.5ma. The product power mos v®, is a highly preferred choice for users. The maximum gate charge and given voltages include 330nc @ 10v. t-max™ [b2] is the supplier device package value. In addition, tube is the available packaging type of the product. It carries FET type n-channel. Moreover, the product comes in to-247-3 variant. The product has a 200v drain to source voltage. The continuous current drain at 25°C is 100a (tc). This product use mosfet (metal oxide) technology. The microsemi corporation's product offers user-desired applications.

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