Microsemi Corporation APT1003RSLLG

APT1003RSLLG Microsemi Corporation
Microsemi Corporation

Product Information

Rds On (Max) @ Id, Vgs:
3Ohm @ 2A, 10V
Detailed Description:
N-Channel 1000V 4A (Tc) Surface Mount D3 [S]
Input Capacitance (Ciss) (Max) @ Vds:
694pF @ 25V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
5V @ 1mA
Series:
POWER MOS 7®
Gate Charge (Qg) (Max) @ Vgs:
34nC @ 10V
Supplier Device Package:
D3 [S]
Packaging:
Tube
FET Type:
N-Channel
Package / Case:
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Drain to Source Voltage (Vdss):
1000V
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT1003RSLLG. It has a maximum Rds On and voltage of 3ohm @ 2a, 10v. It features n-channel 1000v 4a (tc) surface mount d3 [s]. The product's input capacitance at maximum includes 694pf @ 25v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 5v @ 1ma. The product power mos 7®, is a highly preferred choice for users. The maximum gate charge and given voltages include 34nc @ 10v. d3 [s] is the supplier device package value. In addition, tube is the available packaging type of the product. It carries FET type n-channel. Moreover, the product comes in to-268-3, d³pak (2 leads + tab), to-268aa. The product has a 1000v drain to source voltage. The continuous current drain at 25°C is 4a (tc). This product use mosfet (metal oxide) technology. The microsemi corporation's product offers user-desired applications.

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APT1003R(B,S)LL(Datasheets)

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