Taiwan Semiconductor Corporation TSM22P10CZ C0G

Enrgtech Part No: ET19566615
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Manufacturer Part No:
TSM22P10CZ C0G
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Manufacturer: Taiwan Semiconductor Corporation

TSM22P10CZ-C0G Taiwan Semiconductor Corporation TSM22P10CZ C0G

Product Information

FET Feature:

HTSUS:

8541.29.0095

RoHS Status:

ROHS3 Compliant

Operating Temperature:

150°C (TJ)

Package / Case:

TO-220-3

Rds On (Max) @ Id, Vgs:

140mOhm @ 20A, 10V

title:

TSM22P10CZ C0G

Vgs(th) (Max) @ Id:

3V @ 250µA

REACH Status:

REACH Unaffected

FET Type:

P-Channel

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Drain to Source Voltage (Vdss):

100 V

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This is manufactured by Taiwan Semiconductor Corporation. The manufacturer part number is TSM22P10CZ C0G. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 140mohm @ 20a, 10v. The typical Vgs (th) (max) of the product is 3v @ 250µa. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 125w (tc). The product's input capacitance at maximum includes 2250 pf @ 30 v. The product is available in through hole configuration. The maximum gate charge and given voltages include 42 nc @ 10 v. to-220 is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 22a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

TSM22P10Cx C0G(Datasheets)

Taiwan Semi RoHS(Environmental Information)

Taiwan Semi REACH(Environmental Information)

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