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Renesas Electronics America RJK0301DPB-WS#J0

Renesas Electronics America

Product Information

Rds On (Max) @ Id, Vgs:
2.8mOhm @ 30A, 10V
Detailed Description:
N-Channel 30V 60A (Ta) 65W (Tc) Surface Mount 5-LFPAK
Input Capacitance (Ciss) (Max) @ Vds:
5000pF @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
+16V, -12V
Gate Charge (Qg) (Max) @ Vgs:
32nC @ 10V
Supplier Device Package:
5-LFPAK
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Tape & Reel (TR)
Operating Temperature:
150°C
FET Type:
N-Channel
Customer Reference:
Package / Case:
SC-100, SOT-669
Power Dissipation (Max):
65W (Tc)
Current - Continuous Drain (Id) @ 25°C:
60A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Renesas Electronics America
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This is manufactured by Renesas Electronics America. The manufacturer part number is RJK0301DPB-WS#J0. It has a maximum Rds On and voltage of 2.8mohm @ 30a, 10v. It features n-channel 30v 60a (ta) 65w (tc) surface mount 5-lfpak. The product's input capacitance at maximum includes 5000pf @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has a 30v drain to source voltage. The maximum Vgs rate is +16v, -12v. The maximum gate charge and given voltages include 32nc @ 10v. 5-lfpak is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tape & reel (tr) is the available packaging type of the product. The product has 150°c operating temperature range. It carries FET type n-channel. Moreover, the product comes in sc-100, sot-669. The product carries maximum power dissipation 65w (tc). The continuous current drain at 25°C is 60a (ta). This product use mosfet (metal oxide) technology. The renesas electronics america's product offers user-desired applications.

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Mult Dev EOL 15/Dec/2018(PCN Obsolescence/ EOL)

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