ON Semiconductor NDS355AN_G

NDS355AN_G ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
NDS355
Detailed Description:
N-Channel 30V 1.7A (Ta) 500mW (Ta) Surface Mount SOT-23-3
Input Capacitance (Ciss) (Max) @ Vds:
195pF @ 15V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2V @ 250µA
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
5nC @ 5V
Rds On (Max) @ Id, Vgs:
85mOhm @ 1.9A, 10V
Supplier Device Package:
SOT-23-3
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max):
500mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
1.7A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NDS355AN_G. Base Part Number: nds355. It features n-channel 30v 1.7a (ta) 500mw (ta) surface mount sot-23-3. The product's input capacitance at maximum includes 195pf @ 15v. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 5nc @ 5v. It has a maximum Rds On and voltage of 85mohm @ 1.9a, 10v. sot-23-3 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The product carries maximum power dissipation 500mw (ta). The continuous current drain at 25°C is 1.7a (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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Mult Devices 10/Mar/2017(PCN Obsolescence/ EOL)

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