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This is manufactured by Renesas Electronics America. The manufacturer part number is HAT2165HWS-E. It has a maximum Rds On and voltage of 3.3mohm @ 27.5a, 10v. It features n-channel 30v 55a (ta) 30w (tc) surface mount 5-lfpak. The product's input capacitance at maximum includes 5180pf @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 33nc @ 4.5v. 5-lfpak is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tape & reel (tr) is the available packaging type of the product. The product has 150°c operating temperature range. It carries FET type n-channel. Moreover, the product comes in sc-100, sot-669. The product carries maximum power dissipation 30w (tc). The continuous current drain at 25°C is 55a (ta). This product use mosfet (metal oxide) technology. The renesas electronics america's product offers user-desired applications.
For more information please check the datasheets.
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