ON Semiconductor FQD12N20LTM_SN00173

FQD12N20LTM_SN00173 ON Semiconductor
ON Semiconductor

Product Information

Detailed Description:
N-Channel 200V 9A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount TO-252AA
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
FQD1
Gate Charge (Qg) (Max) @ Vgs:
21nC @ 5V
Rds On (Max) @ Id, Vgs:
280mOhm @ 4.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
200V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1080pF @ 25V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
TO-252AA
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
Customer Reference:
Power Dissipation (Max):
2.5W (Ta), 55W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FQD12N20LTM_SN00173. It features n-channel 200v 9a (tc) 2.5w (ta), 55w (tc) surface mount to-252aa. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: fqd1. The maximum gate charge and given voltages include 21nc @ 5v. It has a maximum Rds On and voltage of 280mohm @ 4.5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v, 10v. The on semiconductor's product offers user-desired applications. The product has a 200v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1080pf @ 25v. The product is available in surface mount configuration. The product qfet®, is a highly preferred choice for users. to-252aa is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 9a (tc). The product carries maximum power dissipation 2.5w (ta), 55w (tc). This product use mosfet (metal oxide) technology.

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Mult Devices 10/Mar/2017(PCN Obsolescence/ EOL)

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