Microsemi Corporation APT5SM170S

APT5SM170S Microsemi Corporation
APT5SM170S
Microsemi Corporation

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3.2V @ 500µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Rds On (Max) @ Id, Vgs:
1.2Ohm @ 2A, 20V
title:
APT5SM170S
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
Drain to Source Voltage (Vdss):
1700 V
Vgs (Max):
+25V, -10V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
325 pF @ 1000 V
Mounting Type:
Surface Mount
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
29 nC @ 20 V
Supplier Device Package:
D3PAK
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
4.6A (Tc)
Power Dissipation (Max):
52W (Tc)
Technology:
SiCFET (Silicon Carbide)
ECCN:
EAR99
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT5SM170S. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3.2v @ 500µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-268-3, d3pak (2 leads + tab), to-268aa. It has a maximum Rds On and voltage of 1.2ohm @ 2a, 20v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 20v. The product has a 1700 v drain to source voltage. The maximum Vgs rate is +25v, -10v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 325 pf @ 1000 v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 29 nc @ 20 v. d3pak is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 4.6a (tc). The product carries maximum power dissipation 52w (tc). This product use sicfet (silicon carbide) technology. The product is designated with the ear99 code number.

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