ON Semiconductor 2N7000BU_T

2N7000BU_T ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
2N7000
Detailed Description:
N-Channel 60V 200mA (Tc) 400mW (Ta) Through Hole TO-92-3
Input Capacitance (Ciss) (Max) @ Vds:
50pF @ 25V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
3V @ 1mA
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
5Ohm @ 500mA, 10V
Supplier Device Package:
TO-92-3
Packaging:
Bulk
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Power Dissipation (Max):
400mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
200mA (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is 2N7000BU_T. Base Part Number: 2n7000. It features n-channel 60v 200ma (tc) 400mw (ta) through hole to-92-3. The product's input capacitance at maximum includes 50pf @ 25v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 3v @ 1ma. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It has a maximum Rds On and voltage of 5ohm @ 500ma, 10v. to-92-3 is the supplier device package value. In addition, bulk is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). The product carries maximum power dissipation 400mw (ta). The continuous current drain at 25°C is 200ma (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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Mult Devices 10/Mar/2017(PCN Obsolescence/ EOL)

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