Microsemi Corporation APT9F100S

APT9F100S Microsemi Corporation
APT9F100S
Microsemi Corporation

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Gate Charge (Qg) (Max) @ Vgs:
80 nC @ 10 V
Rds On (Max) @ Id, Vgs:
1.6Ohm @ 5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
1000 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
337W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2606 pF @ 25 V
Mounting Type:
Surface Mount
Series:
POWER MOS 8™
Supplier Device Package:
D3PAK
Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT9F100S. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 1ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-268-3, d³pak (2 leads + tab), to-268aa. The maximum gate charge and given voltages include 80 nc @ 10 v. It has a maximum Rds On and voltage of 1.6ohm @ 5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 1000 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 337w (tc). The product's input capacitance at maximum includes 2606 pf @ 25 v. The product is available in surface mount configuration. The product power mos 8™, is a highly preferred choice for users. d3pak is the supplier device package value. The continuous current drain at 25°C is 9a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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