Vishay Siliconix SIHD6N80AE-GE3

Vishay Siliconix

Product Information

Manufacturer Standard Lead Time:
14 Weeks
Detailed Description:
N-Channel 800V 5A (Tc) 62.5W (Tc) Surface Mount D-PAK (TO-252AA)
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
SIHD6
Gate Charge (Qg) (Max) @ Vgs:
22.5nC @ 10V
Rds On (Max) @ Id, Vgs:
950mOhm @ 2A, 10V
FET Type:
N-Channel
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
800V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
422pF @ 100V
Mounting Type:
Surface Mount
Series:
E
Supplier Device Package:
D-PAK (TO-252AA)
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
5A (Tc)
Customer Reference:
Power Dissipation (Max):
62.5W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Vishay Siliconix. The manufacturer part number is SIHD6N80AE-GE3. It has typical 14 weeks of manufacturer standard lead time. It features n-channel 800v 5a (tc) 62.5w (tc) surface mount d-pak (to-252aa). The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: sihd6. The maximum gate charge and given voltages include 22.5nc @ 10v. It has a maximum Rds On and voltage of 950mohm @ 2a, 10v. It carries FET type n-channel. The vishay siliconix's product offers user-desired applications. The product has a 800v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 422pf @ 100v. The product is available in surface mount configuration. The product e, is a highly preferred choice for users. d-pak (to-252aa) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 5a (tc). The product carries maximum power dissipation 62.5w (tc). This product use mosfet (metal oxide) technology.

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SIHD6N80AE(Datasheets)

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FAQs

Yes. You can also search SIHD6N80AE-GE3 on website for other similar products.
We accept all major payment methods for all products including ET19490013. Please check your shopping cart at the time of order.
You can order Vishay Siliconix brand products with SIHD6N80AE-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SIHD6N80AE-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SIHD6N80AE-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET19490013 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET19490013.
Yes. We ship SIHD6N80AE-GE3 Internationally to many countries around the world.