Microsemi Corporation APT10M11JVFR

APT10M11JVFR Microsemi Corporation
Microsemi Corporation

Product Information

Rds On (Max) @ Id, Vgs:
11mOhm @ 500mA, 10V
Detailed Description:
N-Channel 100V 144A Chassis Mount ISOTOP®
Input Capacitance (Ciss) (Max) @ Vds:
10380pF @ 25V
Mounting Type:
Chassis Mount
Vgs(th) (Max) @ Id:
4V @ 2.5mA
Series:
POWER MOS V®
Gate Charge (Qg) (Max) @ Vgs:
450nC @ 10V
Supplier Device Package:
ISOTOP®
Packaging:
Tube
FET Type:
N-Channel
Package / Case:
SOT-227-4, miniBLOC
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
144A
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT10M11JVFR. It has a maximum Rds On and voltage of 11mohm @ 500ma, 10v. It features n-channel 100v 144a chassis mount isotop®. The product's input capacitance at maximum includes 10380pf @ 25v. The product is available in chassis mount configuration. The typical Vgs (th) (max) of the product is 4v @ 2.5ma. The product power mos v®, is a highly preferred choice for users. The maximum gate charge and given voltages include 450nc @ 10v. isotop® is the supplier device package value. In addition, tube is the available packaging type of the product. It carries FET type n-channel. Moreover, the product comes in sot-227-4, minibloc. The product has a 100v drain to source voltage. The continuous current drain at 25°C is 144a. This product use mosfet (metal oxide) technology. The microsemi corporation's product offers user-desired applications.

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