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This is manufactured by SemiQ. The manufacturer part number is GP2M012A080NG. It has a maximum Rds On and voltage of 650mohm @ 6a, 10v. It features n-channel 800v 12a (tc) 416w (tc) through hole to-3pn. The product's input capacitance at maximum includes 3370pf @ 25v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has a 800v drain to source voltage. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 79nc @ 10v. to-3pn is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-3p-3, sc-65-3. The product carries maximum power dissipation 416w (tc). The continuous current drain at 25°C is 12a (tc). This product use mosfet (metal oxide) technology. The semiq's product offers user-desired applications.
For more information please check the datasheets.
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