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This is manufactured by SemiQ. The manufacturer part number is GP1M010A080H. It has a maximum Rds On and voltage of 1.05ohm @ 4.75a, 10v. It features n-channel 800v 9.5a (tc) 290w (tc) through hole to-220. The product's input capacitance at maximum includes 2336pf @ 25v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has a 800v drain to source voltage. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 53nc @ 10v. to-220 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-220-3. The product carries maximum power dissipation 290w (tc). The continuous current drain at 25°C is 9.5a (tc). This product use mosfet (metal oxide) technology. The semiq's product offers user-desired applications.
For more information please check the datasheets.
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