SemiQ GP1M006A065FH

GP1M006A065FH SemiQ
SemiQ

Product Information

Rds On (Max) @ Id, Vgs:
1.6Ohm @ 2.75A, 10V
Detailed Description:
N-Channel 650V 5.5A (Tc) 39W (Tc) Through Hole TO-220F
Input Capacitance (Ciss) (Max) @ Vds:
1177pF @ 25V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4V @ 250µA
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
17nC @ 10V
Supplier Device Package:
TO-220F
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Package / Case:
TO-220-3 Full Pack
Power Dissipation (Max):
39W (Tc)
Current - Continuous Drain (Id) @ 25°C:
5.5A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
SemiQ
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This is manufactured by SemiQ. The manufacturer part number is GP1M006A065FH. It has a maximum Rds On and voltage of 1.6ohm @ 2.75a, 10v. It features n-channel 650v 5.5a (tc) 39w (tc) through hole to-220f. The product's input capacitance at maximum includes 1177pf @ 25v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has a 650v drain to source voltage. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 17nc @ 10v. to-220f is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-220-3 full pack. The product carries maximum power dissipation 39w (tc). The continuous current drain at 25°C is 5.5a (tc). This product use mosfet (metal oxide) technology. The semiq's product offers user-desired applications.

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GP1M006A065(F)H(Datasheets)

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