SemiQ GP1M003A080CH

GP1M003A080CH SemiQ
SemiQ

Product Information

Rds On (Max) @ Id, Vgs:
4.2Ohm @ 1.5A, 10V
Detailed Description:
N-Channel 800V 3A (Tc) 94W (Tc) Surface Mount TO-252, (D-Pak)
Input Capacitance (Ciss) (Max) @ Vds:
696pF @ 25V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
4V @ 250µA
Drain to Source Voltage (Vdss):
800V
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
19nC @ 10V
Supplier Device Package:
TO-252, (D-Pak)
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max):
94W (Tc)
Current - Continuous Drain (Id) @ 25°C:
3A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
SemiQ
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This is manufactured by SemiQ. The manufacturer part number is GP1M003A080CH. It has a maximum Rds On and voltage of 4.2ohm @ 1.5a, 10v. It features n-channel 800v 3a (tc) 94w (tc) surface mount to-252, (d-pak). The product's input capacitance at maximum includes 696pf @ 25v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has a 800v drain to source voltage. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 19nc @ 10v. to-252, (d-pak) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The product carries maximum power dissipation 94w (tc). The continuous current drain at 25°C is 3a (tc). This product use mosfet (metal oxide) technology. The semiq's product offers user-desired applications.

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GP1M003A080xH(Datasheets)

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