Taiwan Semiconductor Corporation TSM4ND60CI C0G

TSM4ND60CI-C0G Taiwan Semiconductor Corporation TSM4ND60CI C0G
Taiwan Semiconductor Corporation

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3.8V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack, Isolated Tab
Rds On (Max) @ Id, Vgs:
2.2Ohm @ 1.4A, 10V
edacadModel:
TSM4ND60CI C0G Models
Gate Charge (Qg) (Max) @ Vgs:
17.2 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/9602846
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
41.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
582 pF @ 50 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
ITO-220
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TSM4ND60
ECCN:
EAR99
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This is manufactured by Taiwan Semiconductor Corporation. The manufacturer part number is TSM4ND60CI C0G. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3.8v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack, isolated tab. It has a maximum Rds On and voltage of 2.2ohm @ 1.4a, 10v. The maximum gate charge and given voltages include 17.2 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 41.6w (tc). The product's input capacitance at maximum includes 582 pf @ 50 v. The product is available in through hole configuration. ito-220 is the supplier device package value. The continuous current drain at 25°C is 4a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tsm4nd60, a base product number of the product. The product is designated with the ear99 code number.

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OBS 22/Jan/2024(PCN Obsolescence/ EOL)
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Taiwan Semi RoHS(Environmental Information)
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Taiwan Semi REACH(Environmental Information)

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FAQs

Yes. You can also search TSM4ND60CI C0G on website for other similar products.
We accept all major payment methods for all products including ET19286315. Please check your shopping cart at the time of order.
You can order Taiwan Semiconductor Corporation brand products with TSM4ND60CI C0G directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Taiwan Semiconductor Corporation TSM4ND60CI C0G. You can also check on our website or by contacting our customer support team for further order details on Taiwan Semiconductor Corporation TSM4ND60CI C0G.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET19286315 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Taiwan Semiconductor Corporation" products on our website by using Enrgtech's Unique Manufacturing Part Number ET19286315.
Yes. We ship TSM4ND60CI C0G Internationally to many countries around the world.