Toshiba Semiconductor and Storage TK040Z65Z,S1F

TK040Z65Z-S1F Toshiba Semiconductor and Storage TK040Z65Z,S1F
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C
Package / Case:
TO-247-4
Rds On (Max) @ Id, Vgs:
40mOhm @ 28.5A, 10V
title:
TK040Z65Z,S1F
Vgs(th) (Max) @ Id:
4V @ 2.85mA
REACH Status:
REACH Unaffected
edacadModel:
TK040Z65Z,S1F Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/11306237
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
360W (Tc)
standardLeadTime:
24 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
6250 pF @ 300 V
Mounting Type:
Through Hole
Series:
DTMOSVI
Gate Charge (Qg) (Max) @ Vgs:
105 nC @ 10 V
Supplier Device Package:
TO-247-4L(T)
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
57A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK040Z65
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK040Z65Z,S1F. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 150°c operating temperature range. Moreover, the product comes in to-247-4. It has a maximum Rds On and voltage of 40mohm @ 28.5a, 10v. The typical Vgs (th) (max) of the product is 4v @ 2.85ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 360w (tc). It has a long 24 weeks standard lead time. The product's input capacitance at maximum includes 6250 pf @ 300 v. The product is available in through hole configuration. The product dtmosvi, is a highly preferred choice for users. The maximum gate charge and given voltages include 105 nc @ 10 v. to-247-4l(t) is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 57a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk040z65, a base product number of the product. The product is designated with the ear99 code number.

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FAQs

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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TK040Z65Z,S1F. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TK040Z65Z,S1F.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET19192840 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET19192840.
Yes. We ship TK040Z65Z,S1F Internationally to many countries around the world.