ON Semiconductor NTTFS004N04CTAG

ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
27 Weeks
Detailed Description:
N-Channel 40V 18A (Ta), 77A (Tc) 3.2W (Ta), 55W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id:
3.5V @ 50µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerWDFN
Base Part Number:
NTTFS004
Gate Charge (Qg) (Max) @ Vgs:
18nC @ 10V
Rds On (Max) @ Id, Vgs:
4.9mOhm @ 35A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1150pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
8-WDFN (3.3x3.3)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
18A (Ta), 77A (Tc)
Customer Reference:
Power Dissipation (Max):
3.2W (Ta), 55W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NTTFS004N04CTAG. It has typical 27 weeks of manufacturer standard lead time. It features n-channel 40v 18a (ta), 77a (tc) 3.2w (ta), 55w (tc) surface mount 8-wdfn (3.3x3.3). The typical Vgs (th) (max) of the product is 3.5v @ 50µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in 8-powerwdfn. Base Part Number: nttfs004. The maximum gate charge and given voltages include 18nc @ 10v. It has a maximum Rds On and voltage of 4.9mohm @ 35a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 40v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1150pf @ 25v. The product is available in surface mount configuration. 8-wdfn (3.3x3.3) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 18a (ta), 77a (tc). The product carries maximum power dissipation 3.2w (ta), 55w (tc). This product use mosfet (metal oxide) technology.

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Mult Dev Assembly/Mat Chg 6/Aug/2019(PCN Assembly/Origin)
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NTTFS004N04C(Datasheets)

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