Maximum Continuous Drain Current:
200 A
Width:
4.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2V
Package Type:
LFPAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
70 @ 10 V nC
Channel Type:
N
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
110 W
Maximum Gate Source Voltage:
±20 V
Height:
1.15mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
2.2 mO
Manufacturer Standard Lead Time:
35 Weeks
Detailed Description:
N-Channel 40V 38A (Ta), 200A (Tc) 3.8W (Ta), 110W (Tc) Surface Mount 8-LFPAK
Vgs(th) (Max) @ Id:
2V @ 130µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
SOT-1205, 8-LFPAK56
Base Part Number:
NTMJS1
Gate Charge (Qg) (Max) @ Vgs:
70nC @ 10V
Rds On (Max) @ Id, Vgs:
1.4mOhm @ 50A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4300pF @ 20V
Mounting Type:
Surface Mount
Supplier Device Package:
8-LFPAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
38A (Ta), 200A (Tc)
Customer Reference:
Power Dissipation (Max):
3.8W (Ta), 110W (Tc)
Technology:
MOSFET (Metal Oxide)
