Deliver to
United Kingdom
Enjoy 5% savings by entering the code 'SAVE5' when you spend £50 or more!
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK3R9E10PL,S1X. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has 175°c operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 3.9mohm @ 50a, 10v. The maximum gate charge and given voltages include 96 nc @ 10 v. The product is rohs3 compliant. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tube package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 230w (tc). The product's input capacitance at maximum includes 6320 pf @ 50 v. It has a long 24 weeks standard lead time. The product is available in through hole configuration. to-220 is the supplier device package value. The continuous current drain at 25°C is 100a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk3r9e10, a base product number of the product. The product is designated with the ear99 code number.
Basket Total:
£ 0
