Maximum Continuous Drain Current:
10 A
Width:
8mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
PQFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
18 @ 10 V nC
Channel Type:
N
Length:
8mm
Pin Count:
4
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
83 W
Maximum Gate Source Voltage:
±30 V
Height:
1.05mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
360 mO
Manufacturer Standard Lead Time:
26 Weeks
Detailed Description:
N-Channel 650V 10A (Tc) 83W (Tc) Surface Mount 4-PQFN (8x8)
Vgs(th) (Max) @ Id:
4.5V @ 200µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
4-PowerTSFN
Base Part Number:
FCMT360
Gate Charge (Qg) (Max) @ Vgs:
18nC @ 10V
Rds On (Max) @ Id, Vgs:
360mOhm @ 5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
730pF @ 400V
Mounting Type:
Surface Mount
Series:
SuperFET® III
Supplier Device Package:
4-PQFN (8x8)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Customer Reference:
Power Dissipation (Max):
83W (Tc)
Technology:
MOSFET (Metal Oxide)
