STMicroelectronics SCT30N120D2

STMicroelectronics

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3.5V @ 1mA
Operating Temperature:
-55°C ~ 200°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
105 nC @ 20 V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
100mOhm @ 20A, 20V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
Package:
Tray
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:
1700 pF @ 400 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
HiP247™
Current - Continuous Drain (Id) @ 25°C:
40A (Tc)
Power Dissipation (Max):
270W (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
SCT30
ECCN:
EAR99
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This is manufactured by STMicroelectronics. The manufacturer part number is SCT30N120D2. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3.5v @ 1ma. The product has -55°c ~ 200°c (tj) operating temperature range. Moreover, the product comes in to-247-3. The maximum gate charge and given voltages include 105 nc @ 20 v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 100mohm @ 20a, 20v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 20v. It is shipped in tray package . The product has a 1200 v drain to source voltage. The maximum Vgs rate is +25v, -10v. The product's input capacitance at maximum includes 1700 pf @ 400 v. The product is available in through hole configuration. hip247™ is the supplier device package value. The continuous current drain at 25°C is 40a (tc). The product carries maximum power dissipation 270w (tc). This product use sicfet (silicon carbide) technology. Moreover, it corresponds to sct30, a base product number of the product. The product is designated with the ear99 code number.

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