Rohm Semiconductor RS1L120GNTB

RS1L120GNTB Rohm Semiconductor
Rohm Semiconductor

Product Information

Base Part Number:
RS1L
Detailed Description:
N-Channel 60V 12A (Ta), 36A (Tc) 3W (Ta) Surface Mount 8-HSOP
Input Capacitance (Ciss) (Max) @ Vds:
1330pF @ 30V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.7V @ 200µA
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
26nC @ 10V
Rds On (Max) @ Id, Vgs:
12.7mOhm @ 12A, 10V
Supplier Device Package:
8-HSOP
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
8-PowerTDFN
Power Dissipation (Max):
3W (Ta)
Current - Continuous Drain (Id) @ 25°C:
12A (Ta), 36A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is RS1L120GNTB. Base Part Number: rs1l. It features n-channel 60v 12a (ta), 36a (tc) 3w (ta) surface mount 8-hsop. The product's input capacitance at maximum includes 1330pf @ 30v. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.7v @ 200µa. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 26nc @ 10v. It has a maximum Rds On and voltage of 12.7mohm @ 12a, 10v. 8-hsop is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 8-powertdfn. The product carries maximum power dissipation 3w (ta). The continuous current drain at 25°C is 12a (ta), 36a (tc). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.

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RS1L120GN(Datasheets)

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