Rohm Semiconductor RQ6E080AJTCR

RQ6E080AJTCR Rohm Semiconductor
Rohm Semiconductor

Product Information

Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
N-Channel 30V 8A (Ta) 950mW (Ta) Surface Mount TSMT6 (SC-95)
Vgs(th) (Max) @ Id:
1.5V @ 2mA
Operating Temperature:
150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Base Part Number:
RQ6E080
Gate Charge (Qg) (Max) @ Vgs:
16.2nC @ 4.5V
Rds On (Max) @ Id, Vgs:
16.5mOhm @ 8A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Manufacturer:
Rohm Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
1810pF @ 15V
Mounting Type:
Surface Mount
Supplier Device Package:
TSMT6 (SC-95)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
8A (Ta)
Customer Reference:
Power Dissipation (Max):
950mW (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Rohm Semiconductor. The manufacturer part number is RQ6E080AJTCR. It has typical 16 weeks of manufacturer standard lead time. It features n-channel 30v 8a (ta) 950mw (ta) surface mount tsmt6 (sc-95). The typical Vgs (th) (max) of the product is 1.5v @ 2ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. Base Part Number: rq6e080. The maximum gate charge and given voltages include 16.2nc @ 4.5v. It has a maximum Rds On and voltage of 16.5mohm @ 8a, 4.5v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. The rohm semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±12v. The product's input capacitance at maximum includes 1810pf @ 15v. The product is available in surface mount configuration. tsmt6 (sc-95) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 8a (ta). The product carries maximum power dissipation 950mw (ta). This product use mosfet (metal oxide) technology.

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RQ6E080AJ(Datasheets)

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