Rohm Semiconductor RF4C100BCTCR

RF4C100BCTCR Rohm Semiconductor
Rohm Semiconductor

Product Information

Base Part Number:
RF4C100
Detailed Description:
P-Channel 20V 10A (Ta) 2W (Ta) Surface Mount HUML2020L8
Input Capacitance (Ciss) (Max) @ Vds:
1660pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.2V @ 1mA
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Gate Charge (Qg) (Max) @ Vgs:
23.5nC @ 4.5V
Rds On (Max) @ Id, Vgs:
15.6mOhm @ 10A, 4.5V
Supplier Device Package:
HUML2020L8
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
8-PowerUDFN
Power Dissipation (Max):
2W (Ta)
Current - Continuous Drain (Id) @ 25°C:
10A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is RF4C100BCTCR. Base Part Number: rf4c100. It features p-channel 20v 10a (ta) 2w (ta) surface mount huml2020l8. The product's input capacitance at maximum includes 1660pf @ 10v. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1.2v @ 1ma. The product has a 20v drain to source voltage. The maximum Vgs rate is ±8v. The maximum gate charge and given voltages include 23.5nc @ 4.5v. It has a maximum Rds On and voltage of 15.6mohm @ 10a, 4.5v. huml2020l8 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in 8-powerudfn. The product carries maximum power dissipation 2w (ta). The continuous current drain at 25°C is 10a (ta). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.

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RF4C100BC(Datasheets)

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