Rohm Semiconductor RXH070N03TB1

RXH070N03TB1 Rohm Semiconductor
Rohm Semiconductor

Product Information

Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
N-Channel 30V 7A (Ta) 1.4W (Ta) Surface Mount 8-SOP
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Base Part Number:
RXH070
Gate Charge (Qg) (Max) @ Vgs:
5.8nC @ 5V
Rds On (Max) @ Id, Vgs:
28mOhm @ 7A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Manufacturer:
Rohm Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
390pF @ 10V
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOP
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
7A (Ta)
Customer Reference:
Power Dissipation (Max):
1.4W (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Rohm Semiconductor. The manufacturer part number is RXH070N03TB1. It has typical 16 weeks of manufacturer standard lead time. It features n-channel 30v 7a (ta) 1.4w (ta) surface mount 8-sop. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). Base Part Number: rxh070. The maximum gate charge and given voltages include 5.8nc @ 5v. It has a maximum Rds On and voltage of 28mohm @ 7a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. The rohm semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 390pf @ 10v. The product is available in surface mount configuration. 8-sop is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 7a (ta). The product carries maximum power dissipation 1.4w (ta). This product use mosfet (metal oxide) technology.

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