Rohm Semiconductor RD3G500GNTL

RD3G500GNTL Rohm Semiconductor
Rohm Semiconductor

Product Information

Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
N-Channel 40V 50A (Tc) 35W (Tc) Surface Mount TO-252
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
RD3G500
Gate Charge (Qg) (Max) @ Vgs:
31nC @ 10V
Rds On (Max) @ Id, Vgs:
4.9mOhm @ 50A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
Rohm Semiconductor
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
22800pF @ 20V
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Customer Reference:
Power Dissipation (Max):
35W (Tc)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by Rohm Semiconductor. The manufacturer part number is RD3G500GNTL. It has typical 16 weeks of manufacturer standard lead time. It features n-channel 40v 50a (tc) 35w (tc) surface mount to-252. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: rd3g500. The maximum gate charge and given voltages include 31nc @ 10v. It has a maximum Rds On and voltage of 4.9mohm @ 50a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The rohm semiconductor's product offers user-desired applications. The product has a 40v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 22800pf @ 20v. The product is available in surface mount configuration. to-252 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 50a (tc). The product carries maximum power dissipation 35w (tc). This product use mosfet (metal oxide) technology.

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RD3G500GN Datasheet(Datasheets)

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