Maximum Continuous Drain Current:
57.8 A
Width:
3.15mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
3V
Package Type:
WDFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
22 @ 10 V nC
Channel Type:
N
Length:
3.3mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
77.8 W
Maximum Gate Source Voltage:
±20 V
Height:
0.75mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
15.9 mO
Manufacturer Standard Lead Time:
7 Weeks
Detailed Description:
N-Channel 100V 11.7A (Ta), 57.8 (Tc) 3.2W (Ta), 77.8W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id:
3V @ 85µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerWDFN
Base Part Number:
NVTFS0
Gate Charge (Qg) (Max) @ Vgs:
30nC @ 10V
Rds On (Max) @ Id, Vgs:
10.6mOhm @ 15A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2150pF @ 50V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
11.7A (Ta), 57.8 (Tc)
Customer Reference:
Power Dissipation (Max):
3.2W (Ta), 77.8W (Tc)
Technology:
MOSFET (Metal Oxide)
