Toshiba Semiconductor and Storage SSM3J36TU,LF

SSM3J36TU-LF Toshiba Semiconductor and Storage SSM3J36TU,LF
Toshiba Semiconductor and Storage

Product Information

Manufacturer Standard Lead Time:
12 Weeks
Detailed Description:
P-Channel 20V 330mA (Ta) 800mW (Ta) Surface Mount UFM
Vgs(th) (Max) @ Id:
1V @ 1mA
Operating Temperature:
150°C
Package / Case:
3-SMD, Flat Lead
Base Part Number:
SSM3J36
Gate Charge (Qg) (Max) @ Vgs:
1.2nC @ 4V
Rds On (Max) @ Id, Vgs:
1.31Ohm @ 100mA, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
43pF @ 10V
Mounting Type:
Surface Mount
Supplier Device Package:
UFM
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
330mA (Ta)
Customer Reference:
Power Dissipation (Max):
800mW (Ta)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3J36TU,LF. It has typical 12 weeks of manufacturer standard lead time. It features p-channel 20v 330ma (ta) 800mw (ta) surface mount ufm. The typical Vgs (th) (max) of the product is 1v @ 1ma. The product has 150°c operating temperature range. Moreover, the product comes in 3-smd, flat lead. Base Part Number: ssm3j36. The maximum gate charge and given voltages include 1.2nc @ 4v. It has a maximum Rds On and voltage of 1.31ohm @ 100ma, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.5v, 4.5v. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±8v. The product's input capacitance at maximum includes 43pf @ 10v. The product is available in surface mount configuration. ufm is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 330ma (ta). The product carries maximum power dissipation 800mw (ta). This product use mosfet (metal oxide) technology.

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FAQs

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