Central Semiconductor Corp CP373-CTLDM303N-WN

Central Semiconductor Corp

Product Information

FET Feature:
-
HTSUS:
8541.29.0040
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
Die
Rds On (Max) @ Id, Vgs:
78mOhm @ 1.8A, 2.5V
title:
CP373-CTLDM303N-WN
Vgs(th) (Max) @ Id:
1.2V @ 250µA
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
590 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
13 nC @ 4.5 V
Supplier Device Package:
Die
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
3.6A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Central Semiconductor Corp. The manufacturer part number is CP373-CTLDM303N-WN. It is assigned with possible HTSUS value of 8541.29.0040. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in die. It has a maximum Rds On and voltage of 78mohm @ 1.8a, 2.5v. The typical Vgs (th) (max) of the product is 1.2v @ 250µa. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. The product has a 30 v drain to source voltage. The maximum Vgs rate is 12v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 590 pf @ 10 v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 13 nc @ 4.5 v. die is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 3.6a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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CP373 18/Apr/2019(PCN Obsolescence/ EOL)
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CP373(Datasheets)
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RoHS Cert(Environmental Information)

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FAQs

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