Microsemi Corporation MSC025SMA120B

Microsemi Corporation

Product Information

Manufacturer Standard Lead Time:
17 Weeks
Detailed Description:
N-Channel 1.2kV 103A (Tc) 500W (Tc) Through Hole TO-247-3
Input Capacitance (Ciss) (Max) @ Vds:
3020pF @ 1000V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
2.8V @ 1mA
Drain to Source Voltage (Vdss):
1.2kV
Vgs (Max):
+25V, -10V
Gate Charge (Qg) (Max) @ Vgs:
232nC @ 20V
Supplier Device Package:
TO-247-3
Drive Voltage (Max Rds On, Min Rds On):
20V
Rds On (Max) @ Id, Vgs:
31mOhm @ 40A, 20V
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Package / Case:
TO-247-3
Power Dissipation (Max):
500W (Tc)
Current - Continuous Drain (Id) @ 25°C:
103A (Tc)
Technology:
SiCFET (Silicon Carbide)
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is MSC025SMA120B. It has typical 17 weeks of manufacturer standard lead time. It features n-channel 1.2kv 103a (tc) 500w (tc) through hole to-247-3. The product's input capacitance at maximum includes 3020pf @ 1000v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 2.8v @ 1ma. The product has a 1.2kv drain to source voltage. The maximum Vgs rate is +25v, -10v. The maximum gate charge and given voltages include 232nc @ 20v. to-247-3 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. It has a maximum Rds On and voltage of 31mohm @ 40a, 20v. The product has -55°c ~ 175°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-247-3. The product carries maximum power dissipation 500w (tc). The continuous current drain at 25°C is 103a (tc). This product use sicfet (silicon carbide) technology. The microsemi corporation's product offers user-desired applications.

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Silicon Carbide Semiconductor Products(Datasheets)

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