Renesas Electronics America HAT1069C-EL-E

Renesas Electronics America

Product Information

Rds On (Max) @ Id, Vgs:
52mOhm @ 1.5A, 4.5V
Detailed Description:
P-Channel 12V 4A (Ta) 900mW (Ta) Surface Mount 6-CMFPAK
Input Capacitance (Ciss) (Max) @ Vds:
1380pF @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.2V @ 1mA
Drain to Source Voltage (Vdss):
12V
Vgs (Max):
±8V
Gate Charge (Qg) (Max) @ Vgs:
16nC @ 4.5V
Supplier Device Package:
6-CMFPAK
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Packaging:
Tape & Reel (TR)
Operating Temperature:
150°C
FET Type:
P-Channel
Customer Reference:
Package / Case:
6-SMD, Flat Leads
Power Dissipation (Max):
900mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
4A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Renesas Electronics America
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This is manufactured by Renesas Electronics America. The manufacturer part number is HAT1069C-EL-E. It has a maximum Rds On and voltage of 52mohm @ 1.5a, 4.5v. It features p-channel 12v 4a (ta) 900mw (ta) surface mount 6-cmfpak. The product's input capacitance at maximum includes 1380pf @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1.2v @ 1ma. The product has a 12v drain to source voltage. The maximum Vgs rate is ±8v. The maximum gate charge and given voltages include 16nc @ 4.5v. 6-cmfpak is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tape & reel (tr) is the available packaging type of the product. The product has 150°c operating temperature range. It carries FET type p-channel. Moreover, the product comes in 6-smd, flat leads. The product carries maximum power dissipation 900mw (ta). The continuous current drain at 25°C is 4a (ta). This product use mosfet (metal oxide) technology. The renesas electronics america's product offers user-desired applications.

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Mult Dev EOL 15/Dec/2018(PCN Obsolescence/ EOL)
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HAT1069C(Datasheets)

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