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This is manufactured by Vishay Siliconix. The manufacturer part number is SI7792DP-T1-GE3. The FET features of the product include schottky diode (body). It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® so-8. It has a maximum Rds On and voltage of 2.1mohm @ 20a, 10v. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 6.25w (ta), 104w (tc). The product's input capacitance at maximum includes 4735 pf @ 15 v. The product is available in surface mount configuration. The product skyfet®, trenchfet® gen iii, is a highly preferred choice for users. The maximum gate charge and given voltages include 135 nc @ 10 v. powerpak® so-8 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 40.6a (ta), 60a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to si7792, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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