Vishay Siliconix SISS65DN-T1-GE3

SISS65DN-T1-GE3 Vishay Siliconix
Vishay Siliconix

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® 1212-8S
Rds On (Max) @ Id, Vgs:
4.6mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs:
138 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH info available upon request
edacadModel:
SISS65DN-T1-GE3 Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/9462343
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
5.1W (Ta), 65.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
4930 pF @ 15 V
standardLeadTime:
14 Weeks
Mounting Type:
Surface Mount
Series:
TrenchFET® Gen III
Supplier Device Package:
PowerPAK® 1212-8S
Current - Continuous Drain (Id) @ 25°C:
25.9A (Ta), 94A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SISS65
ECCN:
EAR99
Checking for live stock

This is manufactured by Vishay Siliconix. The manufacturer part number is SISS65DN-T1-GE3. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® 1212-8s. It has a maximum Rds On and voltage of 4.6mohm @ 15a, 10v. The maximum gate charge and given voltages include 138 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach info available upon request. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 5.1w (ta), 65.8w (tc). The product's input capacitance at maximum includes 4930 pf @ 15 v. It has a long 14 weeks standard lead time. The product is available in surface mount configuration. The product trenchfet® gen iii, is a highly preferred choice for users. powerpak® 1212-8s is the supplier device package value. The continuous current drain at 25°C is 25.9a (ta), 94a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to siss65, a base product number of the product. The product is designated with the ear99 code number.

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Manufacturing Capacity Expansion 27/Jul/2023(PCN Assembly/Origin)
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SISS65DN(Datasheets)

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FAQs

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You can order Vishay Siliconix brand products with SISS65DN-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SISS65DN-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SISS65DN-T1-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET17800635 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET17800635.
Yes. We ship SISS65DN-T1-GE3 Internationally to many countries around the world.