Rohm Semiconductor RQ3P300BETB1

RQ3P300BETB1 Rohm Semiconductor
Rohm Semiconductor

Product Information

Rds On (Max) @ Id, Vgs:
21mOhm @ 10A, 10V
Detailed Description:
N-Channel 100V 10A (Ta), 36A (Tc) 2W (Ta), 32W (Tc) Surface Mount 8-HSMT (3.2x3)
Input Capacitance (Ciss) (Max) @ Vds:
1250pF @ 50V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
4V @ 200µA
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
19.1nC @ 10V
Supplier Device Package:
8-HSMT (3.2x3)
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
8-PowerVDFN
Power Dissipation (Max):
2W (Ta), 32W (Tc)
Current - Continuous Drain (Id) @ 25°C:
10A (Ta), 36A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is RQ3P300BETB1. It has a maximum Rds On and voltage of 21mohm @ 10a, 10v. It features n-channel 100v 10a (ta), 36a (tc) 2w (ta), 32w (tc) surface mount 8-hsmt (3.2x3). The product's input capacitance at maximum includes 1250pf @ 50v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 4v @ 200µa. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 19.1nc @ 10v. 8-hsmt (3.2x3) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 8-powervdfn. The product carries maximum power dissipation 2w (ta), 32w (tc). The continuous current drain at 25°C is 10a (ta), 36a (tc). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.

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RQ3P300BETB1 EOL 19/Nov/2019(PCN Obsolescence/ EOL)

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