Maximum Drain Source Voltage:
40 V
Typical Gate Charge @ Vgs:
126 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
245.4 W
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
2V
Channel Type:
N
Width:
8mm
Length:
8.1mm
Maximum Drain Source Resistance:
660 μΩ
Package Type:
DFNW
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
554.5 A
Minimum Gate Threshold Voltage:
1.2V
Forward Diode Voltage:
1.2V
Height:
1.15mm
Maximum Operating Temperature:
+175 °C
Pin Count:
8
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
39 Weeks
Base Part Number:
NTMTS0D
Detailed Description:
N-Channel 40V 554.5A 5W
Input Capacitance (Ciss) (Max) @ Vds:
16013pF @ 20V
Vgs(th) (Max) @ Id:
2V @ 250µA
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
126nC @ 4.5V
Rds On (Max) @ Id, Vgs:
0.42mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Customer Reference:
Power Dissipation (Max):
5W
Current - Continuous Drain (Id) @ 25°C:
554.5A
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
