ON Semiconductor BSS84LT7G

ON Semiconductor

Product Information

Detailed Description:
P-Channel 50V 130mA (Ta) 225mW (Ta) Surface Mount SOT-23-3 (TO-236)
Input Capacitance (Ciss) (Max) @ Vds:
36pF @ 5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2V @ 250µA
Drain to Source Voltage (Vdss):
50V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
2.2nC @ 10V
Supplier Device Package:
SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On):
5V
Rds On (Max) @ Id, Vgs:
10 Ohm @ 100mA, 5V
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Package / Case:
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max):
225mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
130mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is BSS84LT7G. It features p-channel 50v 130ma (ta) 225mw (ta) surface mount sot-23-3 (to-236). The product's input capacitance at maximum includes 36pf @ 5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has a 50v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 2.2nc @ 10v. sot-23-3 (to-236) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. It has a maximum Rds On and voltage of 10 ohm @ 100ma, 5v. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The product carries maximum power dissipation 225mw (ta). The continuous current drain at 25°C is 130ma (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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