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This is manufactured by Vishay Siliconix. The manufacturer part number is SISS32DN-T1-GE3. It has typical 8 weeks of manufacturer standard lead time. It features n-channel 80v 17.4a (ta), 63a (tc) 5w (ta), 65.7w (tc) surface mount powerpak® 1212-8s (3.3x3.3). The typical Vgs (th) (max) of the product is 3.8v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® 1212-8s. Base Part Number: siss32. The maximum gate charge and given voltages include 42nc @ 10v. It has a maximum Rds On and voltage of 7.2mohm @ 10a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 7.5v, 10v. The vishay siliconix's product offers user-desired applications. The product has a 80v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1930pf @ 40v. The product is available in surface mount configuration. The product trenchfet® gen iv, is a highly preferred choice for users. powerpak® 1212-8s (3.3x3.3) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 17.4a (ta), 63a (tc). The product carries maximum power dissipation 5w (ta), 65.7w (tc). This product use mosfet (metal oxide) technology.
For more information please check the datasheets.
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