Deliver to
United Kingdom
Due to adverse weather conditions in the UK, some orders might face delayed processing. We apologise for the inconvenience and thank you for your patience.
This is manufactured by Taiwan Semiconductor Corporation. The manufacturer part number is TSM4ND60CI. It has typical 28 weeks of manufacturer standard lead time. It has a maximum Rds On and voltage of 2.2ohm @ 1.4a, 10v. It features n-channel 600v 4a (tc) 41.6w (tc) through hole ito-220. The product's input capacitance at maximum includes 582pf @ 50v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 3.8v @ 250µa. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 17.2nc @ 10v. ito-220 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-220-3 full pack, isolated tab. The product carries maximum power dissipation 41.6w (tc). The continuous current drain at 25°C is 4a (tc). This product use mosfet (metal oxide) technology. The taiwan semiconductor corporation's product offers user-desired applications.
For more information please check the datasheets.
Basket Total:
£ 0
