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NXP USA Inc. PHD34NQ10T,118

PHD34NQ10T-118 NXP USA Inc. PHD34NQ10T,118
NXP USA Inc.

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
40mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs:
40 nC @ 10 V
Vgs(th) (Max) @ Id:
4V @ 1mA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1704 pF @ 25 V
Mounting Type:
Surface Mount
Series:
TrenchMOS™
Supplier Device Package:
DPAK
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
35A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PHD34
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is PHD34NQ10T,118. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 40mohm @ 17a, 10v. The maximum gate charge and given voltages include 40 nc @ 10 v. The typical Vgs (th) (max) of the product is 4v @ 1ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 136w (tc). The product's input capacitance at maximum includes 1704 pf @ 25 v. The product is available in surface mount configuration. The product trenchmos™, is a highly preferred choice for users. dpak is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 35a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to phd34, a base product number of the product. The product is designated with the ear99 code number.

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PHD34NQ10T(Datasheets)
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NXP USA Inc REACH(Environmental Information)
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NXP USA Inc RoHS Cert(Environmental Information)
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All Dev Label Update 15/Dec/2020(PCN Packaging)

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FAQs

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You can order NXP USA Inc. brand products with PHD34NQ10T,118 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of NXP USA Inc. PHD34NQ10T,118. You can also check on our website or by contacting our customer support team for further order details on NXP USA Inc. PHD34NQ10T,118.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET17482574 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "NXP USA Inc." products on our website by using Enrgtech's Unique Manufacturing Part Number ET17482574.
Yes. We ship PHD34NQ10T,118 Internationally to many countries around the world.
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