Deliver to
United Kingdom
This is manufactured by NXP USA Inc.. The manufacturer part number is PHD23NQ10T,118. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 70mohm @ 13a, 10v. The maximum gate charge and given voltages include 22 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 100w (tc). The product's input capacitance at maximum includes 1187 pf @ 25 v. The product is available in surface mount configuration. The product trenchmos™, is a highly preferred choice for users. dpak is the supplier device package value. The continuous current drain at 25°C is 23a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to phd23, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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