NXP USA Inc. PHB55N03LTA,118

PHB55N03LTA-118 NXP USA Inc. PHB55N03LTA,118
NXP USA Inc.

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
14mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs:
20 nC @ 5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
25 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
85W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
950 pF @ 25 V
Mounting Type:
Surface Mount
Series:
TrenchMOS™
Supplier Device Package:
D2PAK
Current - Continuous Drain (Id) @ 25°C:
55A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PHB55
ECCN:
EAR99
Checking for live stock

This is manufactured by NXP USA Inc.. The manufacturer part number is PHB55N03LTA,118. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 14mohm @ 25a, 10v. The maximum gate charge and given voltages include 20 nc @ 5 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v, 10v. It is shipped in tape & reel (tr) package . The product has a 25 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 85w (tc). The product's input capacitance at maximum includes 950 pf @ 25 v. The product is available in surface mount configuration. The product trenchmos™, is a highly preferred choice for users. d2pak is the supplier device package value. The continuous current drain at 25°C is 55a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to phb55, a base product number of the product. The product is designated with the ear99 code number.

pdf icon
PHB,PHD,PHP55N03LTA(Datasheets)
pdf icon
NXP USA Inc REACH(Environmental Information)
pdf icon
NXP USA Inc RoHS Cert(Environmental Information)
pdf icon
All Dev Label Update 15/Dec/2020(PCN Packaging)

Reviews

  • Be the first to review.


FAQs

Yes. You can also search PHB55N03LTA,118 on website for other similar products.
We accept all major payment methods for all products including ET17482559. Please check your shopping cart at the time of order.
You can order NXP USA Inc. brand products with PHB55N03LTA,118 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of NXP USA Inc. PHB55N03LTA,118. You can also check on our website or by contacting our customer support team for further order details on NXP USA Inc. PHB55N03LTA,118.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET17482559 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "NXP USA Inc." products on our website by using Enrgtech's Unique Manufacturing Part Number ET17482559.
Yes. We ship PHB55N03LTA,118 Internationally to many countries around the world.