NXP USA Inc. PHB225NQ04T,118

PHB225NQ04T-118 NXP USA Inc. PHB225NQ04T,118
NXP USA Inc.

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
3.1mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs:
94 nC @ 10 V
Vgs(th) (Max) @ Id:
4V @ 1mA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
300W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
5100 pF @ 25 V
Mounting Type:
Surface Mount
Series:
TrenchMOS™
Supplier Device Package:
D2PAK
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PHB22
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is PHB225NQ04T,118. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 3.1mohm @ 25a, 10v. The maximum gate charge and given voltages include 94 nc @ 10 v. The typical Vgs (th) (max) of the product is 4v @ 1ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 300w (tc). The product's input capacitance at maximum includes 5100 pf @ 25 v. The product is available in surface mount configuration. The product trenchmos™, is a highly preferred choice for users. d2pak is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 75a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to phb22, a base product number of the product. The product is designated with the ear99 code number.

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PHB,PHP225NQ04T(Datasheets)
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NXP USA Inc REACH(Environmental Information)
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NXP USA Inc RoHS Cert(Environmental Information)
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All Dev Label Update 15/Dec/2020(PCN Packaging)

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FAQs

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