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This is manufactured by NXP USA Inc.. The manufacturer part number is PHB112N06T,118. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 8mohm @ 25a, 10v. The maximum gate charge and given voltages include 87 nc @ 10 v. The typical Vgs (th) (max) of the product is 4v @ 1ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 55 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 200w (tc). The product's input capacitance at maximum includes 4352 pf @ 25 v. The product is available in surface mount configuration. The product trenchmos™, is a highly preferred choice for users. d2pak is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 75a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to phb11, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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