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This is manufactured by NXP USA Inc.. The manufacturer part number is PSMN8R5-108ESQ. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-262-3 long leads, i2pak, to-262aa. It has a maximum Rds On and voltage of 8.5mohm @ 25a, 10v. The maximum gate charge and given voltages include 111 nc @ 10 v. The typical Vgs (th) (max) of the product is 4v @ 1ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 108 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 5512 pf @ 50 v. The product is available in through hole configuration. i2pak is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 100a (tj). The product carries maximum power dissipation 263w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to psmn8, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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