Microsemi Corporation APT8024LVRG

APT8024LVRG Microsemi Corporation
Microsemi Corporation

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 2.5mA
Operating Temperature:
-
Package / Case:
TO-264-3, TO-264AA
Gate Charge (Qg) (Max) @ Vgs:
425 nC @ 10 V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
240mOhm @ 16.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
-
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
7740 pF @ 25 V
Mounting Type:
Through Hole
Series:
POWER MOS V®
Supplier Device Package:
TO-264 [L]
Current - Continuous Drain (Id) @ 25°C:
33A (Tc)
Power Dissipation (Max):
-
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT8024LVRG. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 2.5ma. Moreover, the product comes in to-264-3, to-264aa. The maximum gate charge and given voltages include 425 nc @ 10 v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 240mohm @ 16.5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 800 v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 7740 pf @ 25 v. The product is available in through hole configuration. The product power mos v®, is a highly preferred choice for users. to-264 [l] is the supplier device package value. The continuous current drain at 25°C is 33a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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FAQs

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